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首页> 外文期刊>Journal of Materials Research >Effect of Al~(3+)/Si~(4+) codoping on the structural, optoelectronic and UV sensing properties of ZnO
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Effect of Al~(3+)/Si~(4+) codoping on the structural, optoelectronic and UV sensing properties of ZnO

机译:Al〜(3 +)/ Si〜(4+)编码对ZnO结构,光电子和紫外线感测性能的影响

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摘要

The structural, vibrational, and optoelectronic properties of sol-gel synthesized Zn_(1-x)(Al_(0.5)Si_(0.5))_xO nanoparticles were investigated. The X-ray diffraction studies of the samples confirmed the hexagonal wurtzite phase with the space group P6_3mc. No significant changes were observed in the lattice parameters. The increase in the intensity of E_(high)~2 Raman mode observed at 438 cm~(-1) indicates a decrease in the crystallite size. The reduction in the deep-level emission band with the introduction of Al/Si indicates a decrease in intrinsic defects for the codoped sample. A unique electron paramagnetic resonance signal at g = 1.96 follows the same trend as the green luminescence, and its evolution was shown to probe the oxygen vacancy concentrations. I-V characteristics curve confirm the increase in the conductivity for the codoped samples. To evaluate the role of surface defects, ultraviolet photoresponse behavior as a function of time was also studied, and an increase in the photocurrent was observed. The slow decay and rise in the photocurrent are because of multiple trapping by interstitial defects. A relatively faster response time was observed with the substitution of Al/Si. It has been observed that prepared nanomaterials are suitable for optoelectronic devices.
机译:研究了溶胶 - 凝胶合成Zn_(1-x)的结构,振动和光电性质(Al_(0.5)Si_(0.5))_ XO纳米颗粒。样品的X射线衍射研究证实了空间组P6_3MC的六边形紫硝基钛矿相。在晶格参数中没有观察到显着变化。在438cm〜(-1)的E_(高)〜2拉曼模式的强度的增加表明微晶尺寸的降低。引入Al / Si的深层发射带的减少表明编码样品的固有缺陷降低。 G = 1.96的独特电子顺磁共振信号遵循与绿色发光相同的趋势,并且其演化显示探测氧空位浓度。 I-V特性曲线证实了编排样本的电导率的增加。为了评估表面缺陷的作用,还研究了作为时间函数的紫外光响应行为,观察到光电流的增加。慢衰减和光电流上升是因为间质缺陷多次捕获。通过替代Al / Si,观察到相对更快的响应时间。已经观察到,制备的纳米材料适用于光电器件。

著录项

  • 来源
    《Journal of Materials Research》 |2020年第10期|1337-1345|共9页
  • 作者单位

    Metallurgical Engineering and Material Science Indian Institute of Technology Indore 453552 India;

    Department of Physics Deenbandhu Chhotu Ram University of Science and Technology Sonepat Haryana 131039 India;

    Department of Physics and Astronomy National Institute of Technology Rourkela Odisha 769008 India;

    Discipline of Physics Indian Institute of Technology Indore Indore 453552 India Electronic Engineering Ming Chi University of Technology New Taipei City 24301 Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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