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Development of (Zr,Mn) doped X-type hexaferrites for high frequency EMI shielding applications

机译:开发用于高频EMI屏蔽应用的(Zr,Mn)掺杂X型六方铁氧体

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摘要

X-type hexaferrites with nominal composition of [Ba-2(Zr0.5Mn0.5)(x)Fe28-xO44+0.25x] where x = 0, 1.5, 2 and 2.5 were synthesized using solid state reaction technique by applying two different sintering conditions of 1240 degrees C and 1300 degrees C for 5 h. Phase pure single phase formation of the synthesized hexaferrites were observed using XRD analysis. Surface morphologies of the sintered polished samples were analysed using SEM and found non spherical grains. The average grain size found to be similar to 472.9 nm and similar to 858.11 nm for the samples sintered using the recipe of 1240 degrees C and 1300 degrees C for 5 h respectively. Moreover, the grain size increases with the increase of (Zr,Mn) dopant concentration for the samples sintered at 1240 degrees C for 5 h and was found decreasing with the increase of (Zr,Mn) dopant concentration for the samples prepared at 1300 degrees C for 5 h. The average crystallite size estimated using Scherrer's formula was in the range of 2.4499 nm and 2.275 nm for the samples sintered at 1240 degrees C and 1300 degrees C respectively for 5 h. Magnetic measurements (M-H) and (M-T) were performed using vibrating sample magnetometer (VSM). Highest remnant magnetization was found for the material (x = 2) irrespective of the sintering conditions. Saturation magnetisation was found decreasing with increasing of temperature in all the studied samples irrespective of the sintering conditions. Coercivity (H-c) of all the samples found decreasing with the increase in (Mn,Zr) dopant concentration. Electromagnetic interference (EMI) absorption was determined using E5063A Network Analyser (ENA) with the frequency range of (300 MHz-18 GHz). The sample Ba-2(Zr0.5Mn0.5)(2)Fe26O44.5 (x = 2) sintered at 1240 degrees C, displayed maximum absorption of -36.2 dB (99.975%) at 15.4 GHz with the bandwidth that indicate frequency range in which R-L was more than -20 dB (99% absorption) of 0.7 GHz (15.1 GHz-15.8 GHz). The rest of the studied samples displayed the bandwidth of 1.2 GHz (14.4 GHz-15.6 GHz) for minimum 99% absorption. The sample Ba-2(Zr0.5Mn0.5)(2)Fe26O44.5 (x = 2) sintered at 1300 degrees C, displayed maximum absorption of -35.2 dB (99.97%) at 16.8 GHz with the bandwidth that indicated R-L was more than -20 dB (99% absorption) of 1.6 GHz (16 GHz-17.6 GHz). Zr,Mn doped X-type hexaferrites showed better absorption properties in high frequency range (Ku band (12-18) GHz) and as a result, it can be used for EMI shielding for high frequency applications.
机译:使用两种不同的固相反应技术,通过固相反应合成了标称组成为[Ba-2(Zr0.5Mn0.5)(x)Fe28-xO44 + 0.25x]的X型六价铁氧体。在1240摄氏度和1300摄氏度的条件下烧结5小时。使用XRD分析观察到合成的六价铁氧体的纯相形成。使用SEM分析烧结抛光样品的表面形态,发现非球形晶粒。发现分别使用1240℃和1300℃的配方烧结5小时的样品的平均晶粒尺寸类似于472.9nm并且类似于858.11nm。此外,在1240℃烧结5 h的样品中,晶粒尺寸随(Zr,Mn)掺杂剂浓度的增加而增加,而在1300度时制备的样品,晶粒尺寸随(Zr,Mn)掺杂剂浓度的增加而减小。 C保持5小时。对于分别在1240℃和1300℃烧结5小时的样品,使用Scherrer公式估计的平均微晶尺寸在2.4499nm和2.275nm的范围内。使用振动样品磁力计(VSM)进行磁测量(M-H)和(M-T)。不论烧结条件如何,材料的剩余磁化强度最高(x = 2)。在所有研究的样品中,无论烧结条件如何,饱和磁化强度都随着温度的升高而降低。发现所有样品的矫顽力(H-c)随(Mn,Zr)掺杂剂浓度的增加而降低。使用E5063A网络分析仪(ENA)在(300 MHz-18 GHz)频率范围内确定电磁干扰(EMI)吸收。在1240摄氏度下烧结的样品Ba-2(Zr0.5Mn0.5)(2)Fe26O44.5(x = 2),在15.4 GHz处显示最大吸收-36.2 dB(99.975%),带宽指示频率范围其中RL大于0.7 GHz(15.1 GHz-15.8 GHz)的-20 dB(吸收率99%)。其余的研究样本显示出1.2 GHz(14.4 GHz-15.6 GHz)的带宽,最小吸收99%。在1300摄氏度下烧结的样品Ba-2(Zr0.5Mn0.5)(2)Fe26O44.5(x = 2),在16.8 GHz下显示最大吸收-35.2 dB(99.97%),带宽表明RL为超过1.6 GHz(16 GHz-17.6 GHz)的-20 dB(99%吸收)。 Zr,Mn掺杂的X型六方铁氧体在高频范围(Ku波段(12-18)GHz)中表现出更好的吸收性能,因此可以用于高频应用的EMI屏蔽。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2018年第11期|716-726|共11页
  • 作者单位

    ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;

    ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;

    Singapore Inst Technol, 10 Dover Dr, Singapore 138682, Singapore;

    Singapore Inst Technol, 10 Dover Dr, Singapore 138682, Singapore;

    ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;

    ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;

    ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;

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