Some topological indices for Silicon-Carbon Si_2C_3 - I[p,q] and some inequalities between distance-based and degree-based indices in Silicon-Carbon Si_2C_3 - I[p, q]

摘要

Using inequalities is a good way of studying topological indices. Chemical graph theory is one of the nontrivial applications of graph theory. Silicon-Carbon bonds (si(2)c(3) -I[p,q]) are one of the most important compounds in chemistry. Since calculating distance-based indices for Silicon-Carbon (si(2)c(3)-I[p,q]) is not easily computable, this paper seeks to apply inequalities to determine the relationship between some degree-based indices and distance-based indices.