机译:室温重掺杂硅的红外辐射性能
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332;
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332;
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 Department of Mechanical Engineering and Materials Science, University of Pittsburgh, PA 15261;
microscale; doped silicon; radiative properties; thin films;
机译:施主尺寸和重掺杂对低温条件下各种简并施主硅系统光学,电和热电性质的影响
机译:磁控溅射重掺杂硅靶材制备的掺硼和磷掺杂的微晶硅薄膜的电性能
机译:高温下重掺杂SiGe之间的近场辐射转移
机译:室温下重掺杂硅的红外辐射特性
机译:改进IV族光子图:研究外延生长,低温硅和掺杂硅薄膜的材料特性
机译:Ho3 + / Yb3 +离子共掺杂的重金属氧化物玻璃和光纤的中红外发射和结构性能研究
机译:供体尺寸和重掺杂对低温下各种简并供体 - 硅系统的光学,电气和热电性能的影响
机译:杂质掺杂硅mOsFET的红外响应:金掺杂硅mOsFET(IRFET)的红外响应的实验表征。