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Controlled defective engineering of MoS_2 nanosheets for rechargeable Mg batteries

机译:用于可充电MG电池的MOS_2纳米片的控制缺陷工程

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摘要

Developing high energy density and high stability rechargeable battery for higher power output devices is urgent but challenging. Rechargeable Mg batteries are justified in raising high hopes for grid-scale energy storage. However, the practical application of rechargeable Mg batteries is severely limited by electrolytes and anode materials, especially cathode materials. One of the inherent challenges with rechargeable Mg batteries is how to accelerate the diffusion of Mg2+ in cathode materials. Various approaches are currently in their infancy. Herein, 2D (2 dimension) MoS2 nanosheets of controlled defective degree prepared via hydrothermal method have been investigated for assembled battery systems. The defective structures have been characterized by XRD (X-ray diffraction), FESEM (field emission scanning electron microscopy) and HRTEM (high-resolution transmission electron microscopy), and the cathode performance also been evaluated by cyclic voltammetry, galvanostatic charge/discharge, rate performance and cycling performance tests and electrochemical impedance spectra. The results show that the introduction of defects into MoS2 nanosheets improves the diffusion of Mg2+, resulting an excellent electrochemical performances in rechargeable Mg batteries. The discharge specific capacity reaches up to 152 mAh g(-1) while the charge-transfer resistance (R-ct) only for 2000 Omega, when assembling defective MoS2 as cathode at Mo:S = 1:4. This work highlights the potential applications of defective structure in rechargeable Mg batteries.
机译:为更高功率输出装置开发高能量密度和高稳定性可充电电池是紧迫的,但具有挑战性。可充电MG电池在提高电网级储能储蓄的情况下是合理的。然而,可充电Mg电池的实际应用受电解质和阳极材料,尤其是阴极材料严重限制。可充电MG电池的固有挑战之一是如何加速Mg2 +在阴极材料中的扩散。目前有各种方法在他们的婴儿期间。这里,已经研究了通过水热法制备的受控缺陷度的2D(2尺寸)MOS2纳米电池进行组装电池系统。缺陷结构已经表征了XRD(X射线衍射),FESEM(场发射扫描电子显微镜)和HRTEM(高分辨率透射电子显微镜),并且阴极性能也通过循环伏安法,电压电荷/放电评估,速率性能和循环性能测试和电化学阻抗谱。结果表明,将缺陷引入MOS2纳米蛋白酶的扩散改善了Mg2 +的扩散,导致可充电Mg电池中的优异的电化学性能。当在Mo时将缺陷MOS2组装时,放电特定容量仅达到152mAhg(-1),而仅在2000Ω时达到2000Ω的电荷 - 转印电阻(R-CT)。这项工作突出了可充电MG电池中有缺陷结构的潜在应用。

著录项

  • 来源
    《Journal of Energy Storage》 |2021年第10期|103046.1-103046.7|共7页
  • 作者单位

    Yunnan Punai Kungang High Temp Mat Co Ltd Kunming 650302 Yunnan Peoples R China;

    Univ Sci & Technol Liaoning Sch Mat & Met Anshan 114051 Peoples R China;

    Yunnan Punai Kungang High Temp Mat Co Ltd Kunming 650302 Yunnan Peoples R China;

    Yunnan Punai Kungang High Temp Mat Co Ltd Kunming 650302 Yunnan Peoples R China;

    Univ Sci & Technol Liaoning Sch Mat & Met Anshan 114051 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MoS2; Defective structure; Cathode; Rechargeable Mg batteries;

    机译:MOS2;缺陷结构;阴极;可充电MG电池;

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