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首页> 外文期刊>Journal of Electronic Packaging >Study on Reabsorption Properties of Quantum Dot Color Convertors for Light-Emitting Diode Packaging
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Study on Reabsorption Properties of Quantum Dot Color Convertors for Light-Emitting Diode Packaging

机译:发光二极管封装用量子点颜色转换器的重吸收特性研究

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摘要

Quantum dot (QD) attracts great attention in light-emitting diode (LED) packaging for high-quality light sources, while it leads to low light efficiency due to the significantly high reabsorption loss between QDs. Accordingly, we experimentally study the reabsorption properties of QD color convertors (QCCs) for LED packaging considering various thicknesses and concentrations under different injection current. The results indicate the QCC configuration with a small thickness and large concentration can have the same absorption ability for chip light as that with the opposite configuration, resulting in the same QD light proportion. However, the QCC configuration having smaller thickness is more useful to decrease the reabsorption loss, leading to higher radiant power (an increase of larger than 37.2%). Moreover, it is essential to gain a high radiant power of QD light with small reabsorption loss, which can be realized by combining QCCs with a low QD content and a source with a large injection current. Based on this simple and effective approach, a conversion loss smaller than 20%, close to their quantum yield, can be achieved, which is approximately four times smaller than that gained by QCCs with a high QD content. However, it introduces additional radiant power of chip light, suppressing further improvement in the QD light proportion. Much work is still required to make full use of the redundant chip light. This study provides a better understanding of the reabsorption properties of QCCs and can significantly accelerate their applications in illumination and display applications.
机译:量子点(QD)在用于高质量光源的发光二极管(LED)封装中引起了极大的关注,而由于QD之间的显着高重吸收损耗,导致光效率低下。因此,我们在实验中研究了考虑到不同厚度和浓度在不同注入电流下的LED封装的QD色彩转换器(QCC)的重吸收特性。结果表明,厚度小,浓度大的QCC构型可以具有与相反构型相同的对芯片光的吸收能力,从而获得相同的QD光比例。然而,具有较小厚度的QCC配置对于减少重吸收损耗更有用,从而导致较高的辐射功率(大于37.2%的增加)。而且,必须获得具有低重吸收损耗的高QD光辐射功率,这可以通过组合低QD含量的QCC和具有大注入电流的光源来实现。基于这种简单有效的方法,可以实现转换损耗小于20%(接近其量子产率),约为高QD含量QCC的四倍。但是,它引入了芯片光的附加辐射功率,从而抑制了QD光比例的进一步提高。要充分利用冗余芯片灯,仍需要进行大量工作。这项研究可以更好地理解QCC的重吸收特性,并可以显着加快其在照明和显示应用中的应用。

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