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首页> 外文期刊>Journal of Electronic Materials >Process Modeling and Simulation for Hg_(1-x)Cd_xTe. Part Ⅱ: Self-Diffusion, Interdiffusion, and Fundamental Mechanisms of Point-Defect Interactions in Hg_(1-x)Cd_xTe
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Process Modeling and Simulation for Hg_(1-x)Cd_xTe. Part Ⅱ: Self-Diffusion, Interdiffusion, and Fundamental Mechanisms of Point-Defect Interactions in Hg_(1-x)Cd_xTe

机译:Hg_(1-x)Cd_xTe的过程建模和仿真。第二部分:Hg_(1-x)Cd_xTe中点缺陷相互作用的自扩散,互扩散和基本机理

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摘要

The Hg_(0.8)Cd)_(0.2)Te type-conversion, Hg self-diffusion and interdiffusion processes are analyzed in the context of a first order reaction kinetics approach. Sets of nonlinear, stiffly coupled continuity equations are presented which describe the underlying physics, and their solutions model the observed macroscopic behavior. It is demonstrated that the Frenkel pair mechanism interactions dominated by the cation sublattice, in conjunction with basic diffusive and drift properties of the ionized point defects, comprise the basic processes which effect all macroscopic phenomena discussed. Existing experimental results are reviewed and apparent discrepancies discussed. Use is made of the Stanford University mercury cadmium telluride process simulator to provide quantitative and insightful examples of important results.
机译:在一级反应动力学方法的背景下,分析了Hg_(0.8)Cd)_(0.2)Te的类型转换,Hg自扩散和互扩散过程。提出了非线性的,刚性耦合的连续性方程组,这些方程组描述了基本物理原理,其解法对观察到的宏观行为进行了建模。结果表明,阳离子亚晶格占主导地位的Frenkel对机理相互作用,与电离点缺陷的基本扩散和漂移特性一起,构成影响所有讨论的宏观现象的基本过程。审查了现有的实验结果并讨论了明显的差异。斯坦福大学的碲化汞镉工艺仿真器用于提供重要结果的定量和有见地的示例。

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