Growth of Ga_(1-x)In_xSb alloy crystals by conventional Czochralski pulling

摘要

Attempts were made to grow alloy crystals of Ga_(1-x)In_xSb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystals were grown in the [111] direction. Alloy crystal seeds of about 1-2 mol% InSb were grown from single crystal seeds of nearly pure GaSb. The resultant alloy crystals were used as a seed and grown into alloy crystals of about 2-5 mol% InSb. These new alloy crystals were then used as the seed for final crystal growth. The resultant single crystals showed significant InSb segregation, with InSb rising from about 2 to 6 mol% at the seed ends to around 14-23 mol% InSb at the crystal ends. Crystals containing more than about 5 mol% InSb were susceptible to cracking.