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Effects of impurities on lateral growth of crystals

机译:杂质对晶体横向生长的影响

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The effect of impurities on the step velocity of a growing crystal and, hence, the growth rate of the crystal is formulated on the basis of step pinning theory for the growth from dilute nutrients. The step velocity is obtained by solving two simultaneous equations i.e. one gives step velocity as a function of supersaturation and impurity density, and the other gives impurity density as a function of step velocity and impurity current. A graphical solution of the equation gives us clear explanation about pairing and instability of step trains. The minimum supersaturtion needed for crystal growth is proved to be approximated by 1:3-1:2 power of the current of impinging impurity molecules. Monte Carlo simulation of solid on solid model also verified the step bending and the dependence of the minimum supersaturation vs. current of impinging impurity molecules.
机译:杂质对逐步生长的晶体的步速以及因此晶体的生长速率的影响是基于逐步固定理论从稀养分生长而制定的。阶跃速度是通过求解两个联立方程获得的,即一个方程式给出的阶跃速度是过饱和度和杂质密度的函数,另一个方程式给出的杂质密度是阶跃速度和杂质电流的函数。该方程的图形化解决方案为我们提供了有关步列的配对和不稳定性的清晰解释。晶体生长所需的最小过饱和度被证明是由撞击杂质分子的电流的1:3-1:2功率所近似。固体在固体模型上的蒙特卡洛模拟还验证了阶跃弯曲以及最小过饱和度与撞击杂质分子电流的关系。

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