MBE growth of In(Ga)As quantum dots for entangled light emission

摘要

Radiative biexciton decay in a single semiconductor quantum dot (Q.D) is a process by which entangled pairs of photons can be generated for quantum information applications. The observation of entangled light from a QD requires minimal splitting of exciton states and the ability to isolate the neutral biexciton and exciton photoluminescence (PL) emission of the individual dot. As a consequence, the growth of QDs for this purpose is subject to simultaneous constraints on areal dot density, dot emission energy, and wetting-layer (WL) emission energy. In this work we will describe modifications to the molecular beam epitaxial (MBE) growth of In(Ga)As QDs performed to address these requirements, for the realization of samples which generate entangled light of increasing quality.