Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer

摘要

High-temperature gallium nitride (GaN) crystal growth using the acidic ammonothermal method with ammonium iodide (NH_4I) as a mineralizer was investigated. The growth rate reached 105 urn/day, which was much higher than that previously achieved using acidic ammonothermal methods, and exceeded 100 μm/day, which is the minimum growth rate required for industrial applications. When NH_4I was used as a mineralizer, high-speed crystal growth was achieved at a relatively low pressure compared to the case of using an ammonium chloride (NH_4CI) as a mineralizer.