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首页> 外文期刊>Journal of Crystal Growth >Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films
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Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films

机译:热沉积硒化铅(PbSe)纳米晶体薄膜的结构,光学,形态和电学性质的研究

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In this paper, we report the substrate temperature induced changes in physical properties of thermal evaporated lead selenide (PbSe) thin films from the chemically synthesized nanocrystalline PbSe powders. As the first step, nanocrystalline lead selenide was synthesized by simple chemical method at 80 ℃ using lead nitrate [Pb(NO_3)_2] and sodium selenosulphate [Na_2SeSO_3] in the aqueous alkaline media. Ethylene Diamine Tetra acetic acid (0.1 M) was used as a complexing agent to form stable complexes with metal ions. Later on, the lead selenide thin films were deposited on the degreased glass substrates under a vacuum of 10~(-5)Torr at various substrate temperatures by thermal evaporation technique using the pre-synthesized nanocrystalline PbSe powders. X-ray diffraction results show the synthesized powders and the deposited PbSe films belong to cubic structure. A gradual reduction in optical bandgap of films was observed with increasing substrate temperatures, which revealed the crystallization of the films. These observations are corroborated by photoluminescence spectroscopy study. Changes in surface morphology of the films with respect to substrate temperature were studied by high resolution scanning electron microscopy and atomic force microscopy. Electrical study infers the deposited films are of p-type semiconducting nature.
机译:在本文中,我们报告了由化学合成的纳米晶PbSe粉末引起的衬底温度引起的热蒸发硒化铅(PbSe)薄膜物理性能的变化。第一步,在碱性介质中,采用硝酸铅[Pb(NO_3)_2]和硒酸钠[Na_2SeSO_3],通过简单的化学方法在80℃合成了纳米晶硒化铅。乙二胺四乙酸(0.1 M)用作络合剂,与金属离子形成稳定的络合物。随后,使用预合成的纳米晶态PbSe粉末,通过热蒸发技术,在10〜(-5)Torr真空下,在各种基板温度下,将硒化铅薄膜沉积在脱脂的玻璃基板上。 X射线衍射结果表明合成的粉末和沉积的PbSe膜属于立方结构。随着基底温度的升高,观察到膜的光学带隙逐渐减小,这揭示了膜的结晶。这些观察结果通过光致发光光谱学研究得到证实。通过高分辨率扫描电子显微镜和原子力显微镜研究了膜的表面形态相对于衬底温度的变化。电学研究表明沉积的薄膜具有p型半导体性质。

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