机译:无掩模蚀刻在GaN纳米线上产生的GaN过度生长
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA,Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA;
A1. Defects; A1. Etching; A1. GaN nanowires; A1. X-ray diffraction; A3. Lateral overgrowth; B1. Nitrides;
机译:通过使用直接异质外延横向过生长技术对GaN /蓝宝石界面进行选择性湿法刻蚀来增强GaN基发光二极管的发光
机译:无掩模干法刻蚀GaN发光二极管材料的纳米结构
机译:通过在GaN纳米线上过度生长来形成高品质GaN膜的嵌入式空隙
机译:分子束外延法研究纳米线模板的形貌对氮化硅纳米线在硅上聚结过度生长的影响
机译:GaN纳米线制造和单光子发射器装置应用的蚀刻工艺
机译:GaN的极性反转横向过生长和选择性湿法蚀刻和再生长(PILOSWER)
机译:极性 - 倒的横向过度栽培和选择性湿法蚀刻和再生(Piloswer)的GaN