机译:自构纳米尺度外延横向过生长在r面蓝宝石上生长a面GaN
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, People's Republic of China;
A3. MOCVD; B1. a-plane GaN; B1. Nitrides; B2. Semi-conducting Ⅲ-Ⅴ materials;
机译:三甲基镓流速对单面播种外延横向过生长中r平面蓝宝石上a平面GaN生长的影响
机译:R平面蓝宝石上外延横向过生长非极性a平面GaN的空间分辨和依赖于方向的拉曼映射
机译:在r平面蓝宝石上使用碳化光致抗蚀剂掩模研究a平面GaN外延横向过长
机译:通过MOCVD和RF溅射研究非极性A平面Zno在R平面蓝宝石衬底上的表观生长
机译:蓝宝石上的氮化镓薄膜通过横向外延过生长来减少螺纹位错。
机译:R平面蓝宝石上外延横向过生长非极性a平面GaN的空间分辨和依赖于方向的拉曼映射
机译:在R平面蓝宝石上的外延横向过度长度非极性A-Plane GaN的空间解决和取向依赖拉曼映射