Hf_xZr_(1-x)O_2 films chemical vapor deposited from a single source precursor of anhydrous Hf_xZr_(1-x)(NO_3)_4

摘要

A single-source precursor Hf_xZr_(1_x)(N0_3)_4 (HZN) has been successfully synthesized, and used for chemical vapor deposition of Hf_XZr_(1-x)O_2 films. X-ray photoelectron spectroscopy (XPS) measurement shows that Hf/Zr ratio in the Hf_xZr_(1-x)O_2 films is in good agreement with that in the precursor determined by inductive coupled plasma (ICP) measurement, indicating precise composition transfer from the precursor to deposited films. Basic characteristics of the Hf_xZri_(1-x)O_2 films such as chemical bonding, composition, film structure, band gap and electrical properties etc. were carried out using different analysis techniques.