机译:AlN中间层对通过脉冲金属有机化学气相沉积在蓝宝石上生长的几乎晶格匹配的InAlN / GaN异质结构的输运性能的影响
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
Key Laboratory of Wide Band Cap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China;
A1. Surface structure; A3. Metal organic chemical vapor; deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials; B2. Semiconducting indium compounds;
机译:脉冲金属有机化学气相沉积TMIn脉冲持续时间对蓝宝石上生长的InAlN / GaN异质结构性能的影响
机译:使用脉冲金属-有机化学气相沉积技术,在蓝宝石衬底上生长面内晶格匹配的In0.17Al0.83N中间层,从而提高GaN膜的晶体质量
机译:通过脉冲金属有机化学气相沉积在蓝宝石上生长的高质量InAlN / GaN异质结构
机译:金属有机化学气相沉积在(1122)刻面GaN /蓝宝石模板上生长的InGaN / GaN多量子阱发光二极管的结构和光学性质
机译:通过金属有机化学气相沉积法生长的氮化铟,氮化铟镓合金的光学,结构和传输性能。
机译:通过金属有机化学气相沉积法生长具有不同夹层的高Al含量AlxGa1-xN / GaN多量子阱的子带间吸收特性
机译:生长温度对脉冲金属有机化学气相沉积生长的InGaN沟道异质结构性能的影响
机译:GaInasp / Inp 1.35微米双异质结构激光器通过金属有机化学气相沉积在硅基板上生长