首页> 外文期刊>Journal of Crystal Growth >Growth and electrical properties of 0.95Na_(0.5)Bi_(0.5)TiO_3-0.05K_(0.5)Bi_(0.5)TiO_3 lead-free piezoelectric crystal by the TSSG method
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Growth and electrical properties of 0.95Na_(0.5)Bi_(0.5)TiO_3-0.05K_(0.5)Bi_(0.5)TiO_3 lead-free piezoelectric crystal by the TSSG method

机译:TSSG法生长0.95Na_(0.5)Bi_(0.5)TiO_3-0.05K_(0.5)Bi_(0.5)TiO_3无铅压电晶体及其电性能

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摘要

0.95Na_(0.5)Bi_(0.5)TiO_3-0.05K_(0.5)Bi_(0.5)TiO_3 lead-free piezoelectric single crystal with rhombohedral structure was grown by the top-seeded solution growth method. The temperature dependence of dielectric constant and loss, polarization hysteresis loops, the optimum poling condition and the electromechanical coupling property were investigated for the < 100>-oriented as-grown crystal. The curves e(T) show two anomalies, which are related to the two phase transformations at the temperature range of 130-340 ℃. The piezoelectric constant d_(33) and electromechanical coupling coefficient k_t for the < 001 >-oriented crystal at room temperature reached 147 pC/N and 0.52, respectively. The value of k_t demonstrated a relatively stable thermal electromechanical coupling property over the temperature range of 15-130 ℃
机译:通过顶晶溶液生长法生长了0.95Na_(0.5)Bi_(0.5)TiO_3-0.05K_(0.5)Bi_(0.5)TiO_3具有菱面体结构的无铅压电单晶。研究了<100>取向生长晶体的介电​​常数和损耗,极化磁滞回线,最佳极化条件和机电耦合特性的温度依赖性。曲线e​​(T)显示出两个异常,这与130-340℃温度范围内的两个相变有关。室温下<001>取向晶体的压电常数d_(33)和机电耦合系数k_t分别达到147 pC / N和0.52。 k_t值在15-130℃的温度范围内表现出相对稳定的热电耦合特性

著录项

  • 来源
    《Journal of Crystal Growth》 |2012年第1期|p.34-37|共4页
  • 作者单位

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China,School of Materials Science and Engineering, Changzhou University, Changzhou, jiangsu 213164, China,Graduate School of the Chinese Academy of Sciences, Beijing 10039, China;

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China;

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China,Graduate School of the Chinese Academy of Sciences, Beijing 10039, China;

    School of Materials Science and Engineering, Changzhou University, Changzhou, jiangsu 213164, China;

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China,Graduate School of the Chinese Academy of Sciences, Beijing 10039, China;

    Graduate School of the Chinese Academy of Sciences, Beijing 10039, China;

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China;

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China;

    Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A2. Crystal growth; A2. Top-seeded solution growth method; B1. Bismuth compounds; B1. Perovskites; B2. Lead-free piezoelectric materials;

    机译:A2。晶体生长;A2。种子播种生长方法;B1。铋化合物;B1。钙钛矿;B2。无铅压电材料;

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