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Synthesis, characterization and photoluminescence of ZnO spindles by polyvinylpyrrolidone-assisted low-temperature wet-chemistry process

机译:聚乙烯吡咯烷酮辅助低温湿化学法合成ZnO纺锤体,表征和光致发光

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摘要

ZnO spindles were prepared by wet-chemistry process with surfactant polyvinylpyrrolidone at a low temperature of 35 ℃. The morphologies and structures of the products were characterized by X-ray powder diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. The addition of polyvinylpyrrolidone promoted the formation of ZnO crystal nuclei, and accelerated the growth rate of (0001) plane rich in Zn~(2+) ions. The as-obtained ZnO spindles were twin crystal wurtzite structures, with the size of 30 nm at the tips, 350-450 nm at the center, and 1-1.5 urn in length. The room-temperature photoluminescence results showed that surface effects played a major role in the luminescence of the ZnO spindles, which exhibited a broad violet-blue-green emission band related to deep level defects. We proposed a new growth mechanism, which might be useful for applications in synthesis of size- and shape-controlled ZnO crystals.
机译:用表面活性剂聚乙烯吡咯烷酮在35℃的低温下通过湿化学法制备ZnO纺锤。通过X射线粉末衍射,场发射扫描电子显微镜和高分辨率透射电子显微镜来表征产物的形态和结构。聚乙烯吡咯烷酮的添加促进了ZnO晶核的形成,并促进了富含Zn〜(2+)离子的(0001)面的生长速率。所获得的ZnO纺锤体是双晶纤锌矿结构,尖端尺寸为30 nm,中心尺寸为350-450 nm,长度为1-1.5微米。室温光致发光结果表明,表面效应在ZnO纺锤体的发光中起主要作用,其表现出与深能级缺陷有关的宽紫-蓝-绿发射带。我们提出了一种新的生长机理,这可能对合成尺寸和形状受控的ZnO晶体有用。

著录项

  • 来源
    《Journal of Crystal Growth》 |2012年第1期|p.162-165|共4页
  • 作者单位

    Institute for Advanced Materials and Technology, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, People s Republic of China;

    Institute for Advanced Materials and Technology, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, People s Republic of China;

    Science and Technology on Reliability and Environmental Engineering Laboratory, Beijing Institute of Spacecraft Environment Engineering, 104 Youyi Road, Beijing 100094, People's Republic of China;

    Institute for Advanced Materials and Technology, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, People s Republic of China;

    Institute for Advanced Materials and Technology, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, People s Republic of China;

    Institute for Advanced Materials and Technology, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, People s Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Crystal morphology; A1. Defects; A1. Growth models; A2. Growth from solutions; B1. Zinc compounds; B2. Semiconducting Ⅱ-Ⅵ materials;

    机译:A1。晶体形态A1。缺陷;A1。增长模型;A2。解决方案的增长;B1。锌化合物;B2。半导体Ⅱ-Ⅵ材料;

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