Chemical beam epitaxy of A1As using novel group-V precursors

摘要

Chemical beam epitaxy of AlAs with trimethylaluminum, tertiarybutylarsine or tris(dimethylamino)arsenic at a mod- erate growth temperature has been studied. Reflection high-energy electron diffraction monitoring of growth surfaces reveals that growth with cracked tertiarybutylarsine results in rough growth surfaces and films of poor crystal quality, but on the other hand, with tris(dimethylamino)arsenic, streaky reconstruction patterns are maintained. The surface Chemical processes responsible for the observed growth behavior are discussed. The growth rate variation with group-III and V flow rates is also investigated in the case of tris(dimethylamino)arsenic. The growth rate is found to increase with increasing group-V flux. Dependence of the background hole concentration on growth conditions is discussed.