Epitaxia1 growth of oxides with pulsed laser interval deposition

摘要

In this contribution, pulsed laser deposition (PLD) in combination with high-pressure refiective high-energy electron diffraction (RHEED) is used to study the influence of different parameters including background pressure, substrate temperature, and repetition rate on film growth behaviour. The results are used for a new approach to impose layer-by-layer growth using the high saturation of the deposited material by PLD in combination with a very fast deposition of the amount of material for completing exactly one unit cell. With this approach, which we will call pulsed laser interval deposition (PLID), we are able to deposit complcx oxide materials in a layer-by-layer growth regime where normally island growth occurs.