GaAfs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour

摘要

Selective and conformal heteroepitaxy of GaAs on silicon using a close-spaced vapor transport (CSVT) process based on a reversible water-vapor transport reaction is described here. In selective epitaxy, a GaAs film is grown preferentially through openings defined in an oxide mask which coats a silicon wafer.