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Factors affecting the strengths of σ-hole electrostatic potentials

机译:影响σ孔静电势强度的因素

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摘要

A σ-hole is a region of diminished electronic density on the extension of a covalent bond to an atom. This region often exhibits a positive electrostatic potential, which allows attractive noncovalent interactions with negative sites. In this study, we have systematically examined the dependence of σ-hole potentials upon (a) the atom having the σ-hole, and (b) the remainder of the molecule. We demonstrate that not only relative electron-attracting powers need to be considered, but also relative charge capacities (or polarizabilities), and that other factors can also have significant roles.
机译:σ孔是共价键延伸至原子时电子密度降低的区域。该区域通常表现出正的静电势,这允许与负位进行有吸引力的非共价相互作用。在这项研究中,我们系统地检查了σ空穴电势对(a)具有σ空穴的原子和(b)分子其余部分的依赖性。我们证明,不仅需要考虑相对的电子吸引能力,而且还需要考虑相对的电荷容量(或极化率),并且其他因素也可以发挥重要作用。

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