...
首页> 外文期刊>Journal of Computational Electronics >Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR
【24h】

Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR

机译:石威尔士和晶格空位缺陷对ZGNR金属独立结构的电热传递的影响

获取原文
获取原文并翻译 | 示例
           

摘要

We report the effect of topological as well as lattice vacancy defects on the electro-thermal transport properties of the metallic zigzag graphene nano ribbons at their ballistic limit. We employ the density function theory-Non equilibrium green's function combination to calculate the transmission details. We then present an elaborated study considering the variation in the electrical current and the heat current transport with the change in temperature as well as the voltage gradient across the nano ribbons. The comparative analysis shows, that in the case of topological defects, such as the Stone-Wales defect, the electrical current transport is minimum. Besides, for the voltage gradient of 0.5 Volt and the temperature gradient of 300 K, the heat current transport reduces by ~62 % and ~50 % for the cases of Stones-Wales defect and lattice vacancy defect respectively, compared to that of the perfect one.
机译:我们报告了拓扑和晶格空位缺陷对金属之字形石墨烯纳米带在其弹道极限的电热传输性能的影响。我们采用密度函数理论-非平衡格林函数组合来计算透射率细节。然后,我们提出了一项详尽的研究,考虑了电流和热电流传输随温度的变化以及纳米带上的电压梯度的变化。比较分析表明,在拓扑缺陷(例如Stone-Wales缺陷)的情况下,电流传输最小。此外,对于0.5伏特的电压梯度和300 K的温度梯度,与理想情况相比,Stones-Wales缺陷和晶格空位缺陷的热流输运分别降低了〜62%和〜50%一。

著录项

  • 来源
    《Journal of Computational Electronics》 |2014年第4期|862-871|共10页
  • 作者单位

    Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India;

    Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India,School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, India;

    Department of Electrical Engineering, School of Engineering, Shiv Nadar University, Dadri, Uttar Pradesh 203207, India,Department of Electrical and Communication Engineering, Indian Institute of Information Technology-Allahabad, Allahabad, Uttar Pradesh 211012, India;

    Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZGNR; Stone-Wales defect; Lattice vacancy defect; Metallic; Electrical current; Thermal transport; DFT;

    机译:ZGNR;石威尔氏缺陷;晶格空缺;金属的电流;热力运输;DFT;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号