Lateral trench oxide Schottky rectifier on SOI for power integrated circuits

摘要

In this paper, a Lateral Trench Oxide Schottky (LTOS) rectifier on silicon-on-insulator suitable for power integrated circuits is presented. The proposed structure utilizes a surface Schottky contact with vertical field-plate placed in a trench filled with oxide. The field-plate reduces the electric field on the Schottky contact and suppresses the barrier lowering effect leading to significant improvement in the device performance. Further, the proposed structure folds the drift region in vertical and horizontal directions resulting substantial reduction in pitch length of the device. Two-dimensional numerical simulations have been performed to analyse and optimize the performance of proposed device and results are compared with that of the conventional lateral Schottky rectifier. The LTOS rectifier provides 60 % improvement in breakdown voltage and 50 % reduction in pitch length as compared to the conventional device while maintaining low forward voltage drop and low reverse leakage current.