Multiscale approaches for the simulation of InGaN/GaN LEDs

摘要

In this work we review basic aspects of multiscale approaches for combining atomistic with continuous media descriptions and quantum mechanical with semiclassical drift-diffusion transport models for LED simulations. We show how hybrid coupling of the Green's function formalism with drift-diffusion simulations can give additional insight into device behaviour without compromising too much computational efficiency, and that the inclusion of atomistic tight-binding calculations in a multiscale framework can help in understanding specific features related to alloy fluctuations.