Modeling of characteristic parameters for nano-scale junctionless double gate MOSFET considering quantum mechanical effect

摘要

This paper analytically models the characteristics parameters of nano-scale junctionless double gate MOSFETs under quantum confinement, as junctionless transistors gain advantages over their junction based counterparts recently. The models explicitly show how the device parameters like silicon channel thickness, oxide thickness, channel length etc. affect the characteristic parameters like surface potential, threshold voltage etc. when quantum mechanical effects dominate. We also study the effect of temperature on electron populations on sub-band energy levels. Variable quasi Fermi energy level is considered in this paper to increase the accuracy of the proposed models. Threshold voltage roll-off and drain induced barrier lowering are also analyzed to increase the efficacy of the models. These analytical models, valid from accumulation to depletion regimes, are validated and verified with the data obtained from Schrodinger-Poisson solver model of Technology Computer Aided Design. Simplicity of the proposed models give easy way to understand, analyze, and design Double Gate Junctionless transistors comprehensively.