Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material

摘要

In this paper, dual metal-double gate tunnel field effect transistor (DMG-DGTFET) is discussed for mono & hetero dielectric gate material. The hetero dielectric that we have used at the gate is a combination of SiO(_{text{2 }}) and HfO(_{text{2 }}). The DMG technique is used to optimize the performance of DGTFET along with the mono/hetero dielectric gate material. The results obtained from the simulation are discussed using energy band diagram, tunneling barrier width and compared with hetero & mono dielectric gate. With the application of hetero dielectric to the DMG-DGTFET, the advantages of both the techniques combine and the results shows that higher (I_{ON} /I_{OFF}) ratio ((2times 10^{9})) compared to the mono dielectric case ((2.5times 10^{8})). The average subthreshold slope also improves from 58 mV/decade in mono dielectric to 48 mV/decade in hetero dielectric DMG-DGTEFT. All the simulations are done in Synopsys TCAD for a channel length of 25 nm using the non-local tunneling model.