Electronic properties of axial In_xGa_{1-x}N insertions in GaN nanowires

摘要

We study the optoelectronic properties of GaN nanowires with (hbox {In}_{x}hbox {Ga}_{1-x}hbox {N}) insertions of different, experimentally observed shapes using an eight-band (mathbf {k}cdot mathbf {p}) model. We discuss the impact of the shape on the polarization potential and the confinement of electrons and holes as well as the influence of the surface potential. Finally, we compute the dipole matrix elements for the transitions between several electron and hole states and present them as a function of the transition energy.