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Electronic structure variation during aging for Mg–Zr–O protective films in alternating current plasma display panel

机译:交流电等离子体显示屏中Mg-Zr-O保护膜在老化过程中的电子结构变化

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The variation in both the discharge characteristic and microstructure during aging for Mg–Zr–O protective films was investigated. In the aging process, the firing voltage and the minimum sustain voltage were reduced by 18 V and 10 V, respectively. Meanwhile, the results of x-ray photoelectron spectroscopy (XPS) measurement revealed that the valence band edge of Mg–Zr–O protective films was slightly shifted to a low binding state and the density of states for valence bands was increased. The electronic structure variation related to the changes in crystal structure had an obvious influence on the improvement of discharge characteristic of Mg–Zr–O films.
机译:研究了Mg-Zr-O保护膜在老化过程中放电特性和微观结构的变化。在老化过程中,点火电压和最小维持电压分别降低了18 V和10V。同时,X射线光电子能谱(XPS)的测量结果表明,Mg–Zr–O保护膜的价带边缘略微移至低结合态,价带的态密度增加。与晶体结构变化有关的电子结构变化对改善Mg-Zr-O薄膜的放电特性有明显的影响。

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    《Journal of Applied Physics》 |2010年第1期|P.014502-014502-4|共4页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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