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Remarkable enhancement of upconversion emissions by thermal stimulation in Er-doped Yb_2Mo_3O_(12) microcrystals

机译:通过热刺激在ER-掺杂YB_2MO_3O_(12)微晶中通过热刺激提高上转化排放的显着提高

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摘要

Lanthanide-doped luminescent materials have drawn great attention due to their lighting, display, and sensing applications. However, their emission intensity usually decreases with increasing temperature, leading to a weaken performance. In this work, the Er~(3+)-doped Yb_2Mo_3O_(12) microcrystals with optical temperature sensing properties have been synthesized by a solid-phase sintering route. Under the excitation of a 980 nm laser, the sample shows enhanced upconversion emissions as temperature rises, which is attributed to the negative thermal expansion in the crystal structure and enhanced crystal field strength. At the same time, based on the luminous intensity ratio of two thermally coupled energy levels (Er~(3+):~2H_(11/2),~4S_(3/2)), the temperature sensing properties of the prepared microcrystals were studied. This work achieves high S_R (1207.4/T) in the range from 313 to 573 K, and it is accompanied by a 21-fold enhancement of the upconversion emission intensity. As a whole, this is an excellent material that can be used for optical temperature sensing with highly sensitive and enhanced upconversion emission.
机译:镧系掺杂的发光材料由于其照明,显示和传感应用而引起了很大的关注。然而,它们的发光强度通常随着温度的增加而降低,导致性能削弱。在这项工作中,通过固相烧结途径合成了具有光学温度感测性能的ER〜(3 +)掺杂的YB_2MO_3O_(12)微晶。在980nm激光的激发下,样品显示出增强的上变化发射作为温度升高,这归因于晶体结构中的负热膨胀和增强的晶场强度。同时,基于两种热耦合能级的发光强度比(ER〜(3 +):〜2H_(11/2),〜4S_(3/2)),制备的微晶的温度感测性能研究过。这项工作在313至573 k的范围内实现高S_R(1207.4 / T),它伴随着增强增强发射强度的21倍。作为一个整体,这是一种优异的材料,可用于光学温度感测,具有高敏感和增强的上变频排放。

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  • 来源
    《Journal of Applied Physics》 |2021年第14期|143101.1-143101.8|共8页
  • 作者单位

    College of Optical and Electronic Technology China Jiliang University Hangzhou 310018 People's Republic of China;

    College of Optical and Electronic Technology China Jiliang University Hangzhou 310018 People's Republic of China;

    Hangzhou Electric Connector Factory Hangzhou 310051 People's Republic of China;

    Institute of Optoelectronic Materials and Devices China Jiliang University Hangzhou 310018 People's Republic of China;

    Institute of Optoelectronic Materials and Devices China Jiliang University Hangzhou 310018 People's Republic of China;

    College of Optical and Electronic Technology China Jiliang University Hangzhou 310018 People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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