TiO_2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

摘要

We report a simple metal-insulator-metal (MIM)-type selection device that can alleviate the sneak current path in cross-point arrays. By connecting a nanometer-scale Pt/TiO_2/TiN selection device to a Pt/TiO_(2_x)/TiO_2/W resistive random access memory (RRAM), we could significantly reduce read disturbance from unselected memory cells. This selection device could be easily integrated into an RRAM device, in which it suppressed the sneak current and significantly improved the readout margin compared to that obtained for an RRAM not using a selection device. The introduction of this MIM device can fulfill the requirement for an appropriate selection device for bipolar-type RRAM cross-point applications.