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首页> 外文期刊>Journal of Applied Physics >Continuously tunable temperature coefficient of resistivity in antiperovskite AgN_(1-x)C_xMn_3 (0 ≤ x ≤ 0.15)
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Continuously tunable temperature coefficient of resistivity in antiperovskite AgN_(1-x)C_xMn_3 (0 ≤ x ≤ 0.15)

机译:抗钙钛矿AgN_(1-x)C_xMn_3(0≤x≤0.15)中电阻率的连续可调温度系数

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摘要

The antiperovskite intermetallic compounds AgN_(1-x)C_xMn_3 (0≤x≤0.15) have been synthesized. As x increases, the temperature coefficient of resistivity (TCR) above room temperature decreases monotonically and finally changes the sign from positive to negative above x = 0.1. Meanwhile, the temperature range is gradually broadened. For x = 0.07, TCR is ~3.1ppm/K between 280 K and 375 K. Both the resistivity and its slope are insensitive to the external magnetic field, indicating an insignificant contribution from magnetic scattering or short-range magnetic ordering to the observed low-TCR. As manifested by the Hall effect, the charge carrier density in the paramagnetic state for x = 0.15 is reduced by an order of magnitude in comparison with that for x = 0. The reduction of carrier density and the enhancive disorders when x increases was proposed to be responsible for the decrease in TCR and its sign switch.
机译:合成了抗钙钛矿金属间化合物AgN_(1-x)C_xMn_3(0≤x≤0.15)。随着x的增加,高于室温的电阻率温度系数(TCR)单调降低,并最终在x = 0.1以上将符号从正变为负。同时,温度范围逐渐扩大。对于x = 0.07,在280 K和375 K之间,TCR为〜3.1ppm / K。电阻率及其斜率对外部磁场均不敏感,表明磁散射或短程磁有序对观测到的低点的贡献不大。 -TCR。如霍尔效应所表明的,与x = 0相比,x = 0.15的顺磁性状态下的载流子密度降低了一个数量级。有人提出,当x增加时,载流子密度的降低和增强失调可以负责降低TCR及其符号切换。

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  • 来源
    《Journal of Applied Physics》 |2014年第21期|213912.1-213912.4|共4页
  • 作者单位

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China,High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China,Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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