...
机译:光学敏感的金属-绝缘体-半导体-金属结构中的负电容
Electrical Engineering Department and Russell Burry Nanotechnology Institute Technion, Haifa 32000, Israel;
Electrical Engineering Department and Russell Burry Nanotechnology Institute Technion, Haifa 32000, Israel;
Electrical Engineering Department and Russell Burry Nanotechnology Institute Technion, Haifa 32000, Israel;
Electrical Engineering Department and Russell Burry Nanotechnology Institute Technion, Haifa 32000, Israel;
Electrical Engineering Department and Russell Burry Nanotechnology Institute Technion, Haifa 32000, Israel;
机译:Au / PVA / n-Si结构的正向偏置电容-电压特性中异常峰和负电容的起源
机译:Bi_2Te_(1.5)Se_(1.5)与MOS结构中聚乙烯醇(PVA)薄膜的频率相关电容引起的负量子电容效应
机译:AI /(%7 Zn-PVA)/ p-Si(MPS)结构的电容-电压(C-V)图中的异常峰值和负电容
机译:MFMIS和MFIS结构中的硅掺杂HFO
机译:偏振敏感阴极发光成像和光谱探测的应变III-V薄膜和纳米结构的光学性质
机译:Al2O3 / BaTiO3双层结构中负电容的失意
机译:肖特基二极管结构与GaAs / InAs QDS的负差分电容 - 电压依赖性研究