Bunches of misfit dislocations on the onset of relaxation of Si_(0.4)Ge_(0.6)/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

摘要

The experimental x-ray diffraction patterns of a Si_(0.4)Ge_(0.6)/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60° dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray diffraction peaks do not correspond to the average dislocation density but reveal less than a half of the actual relaxation.