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Electronic Structures and Pr~(3+) Photoluminescence Characteristics in Fresnoite, Sr-Frenoite, and Ge-Frenoite

机译:马氏体,Sr-Frenoite和Ge-Frenoite中的电子结构和Pr〜(3+)的发光特性

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摘要

The undoped and Pr3+-doped Fresnoite (Ba_2TiSi_2O_8), Sr-frenoite (Sr_2TiSi_2O_8), and Ge-frenoite (Ba_2TiSi_2O_8) were synthesized by solid-state reaction at high temperature and their photoluminescence properties and electronic structures were investigated. All these undoped samples show luminescence upon UV irradiation at room temperature. The excitation band of intervalence charge transfer (IVCT) emerged only in Sr_2 TiSi_2O_8:Pr~(3+), which was located at 340 nm. Under 340 nm excitation, Sr_2TiSi_2O_8:Pr~(3+) showed an efficient red emission at 616 nm, ascribing to the ~1D_2→~3H_4 transition of Pr~(3+). However, Pr~(3+) red emissions and the excitation band of IVCT were not observed for Ba_2TiSi_2O_8 and Ba_2TiGe_2O_8 and the possible reasons for such behaviors were discussed.
机译:通过高温固相反应合成了未掺杂和掺杂Pr3 +的方铁矿(Ba_2TiSi_2O_8),Sr-方铁矿(Sr_2TiSi_2O_8)和Ge-方铁矿(Ba_2TiSi_2O_8),并研究了它们的光致发光性能和电子结构。所有这些未掺杂的样品在室温下在紫外线照射下均显示出发光。间隔电荷转移(IVCT)的激发带仅出现在位于340 nm处的Sr_2 TiSi_2O_8:Pr〜(3+)中。在340 nm激发下,Sr_2TiSi_2O_8:Pr〜(3+)在616 nm处显示出有效的红色发射,这归因于Pr〜(3+)的〜1D_2→〜3H_4跃迁。然而,没有观察到Ba_2TiSi_2O_8和Ba_2TiGe_2O_8的Pr〜(3+)红光发射和IVCT的激发带,并讨论了这种行为的可能原因。

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    Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;

    Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;

    Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;

    Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;

    Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;

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