...
机译:快速和慢速充电效果对具有高κ电介质的量子阱MOSFET对IN_(0.7)GA_(0.3)中可靠性不稳定性的影响
Semicond Convergence Campus Korea Polytech Coll Dept Semicond Proc Equipment Anseong Gyeonggi Do South Korea;
Kyungpook Natl Univ Dept Elect Engn Daegu South Korea;
Univ Ulsan Sch Elect Engn 93 Daehak Ro Ulsan South Korea;
quantum-well; flicker noise; MOSFET; reliability;
机译:热载体不稳定性与热载体注入和IN_(0.7)GA_(0.3)的电荷注入相关联,作为具有高κ堆叠的MOSFET
机译:对具有各种高k堆栈的In_(0.7)Ga_(0.3)As MOSFET中与电荷俘获相关的偏置温度不稳定性的全面研究
机译:In_(0.7)Ga_(0.3)As / InAs / In_(0.7)Ga_(0.3)As / InAs / In_(0.7)Ga_(0.3)As双通道双栅极HEMT的薄层载流子密度和Ⅰ-Ⅴ分析应用领域
机译:适用于CMOS应用以外的掩埋沟道In_(0.7)Ga_(0.3)As MOSFET和垂直In_(0.7)Ga_(0.3)As隧穿FET
机译:氧化物半导体晶体管的快速和慢速瞬态充电
机译:在In0.7ga0.3as的不稳定性,用单层AL2O3和双层AL2O3 / HFO2栅极堆叠在正偏置温度(PBT)应力下引起的单层AL2O3和双层AL2O3 / HFO2堆叠