Electrical evidence of multiple-filament formation in tantalum oxide-based resistive switching memory via a novel device structure

摘要

Resistive switching memories are the most promising candidate for next-generation nonvolatile memory devices. Resistive switching behavior is believed to be induced by the formation and rupture of conductive filaments between the electrodes, but the characteristics of the filaments remain controversial. Here, a clear evidence of multiple filaments in TaOx-based resistive switching devices is demonstrated using a pillar-type electrode with equivalent circuit analysis. (C) 2018 The Japan Society of Applied Physics