Crystal Structures and Photoluminescence Properties of Gd_2O_3:Eu~(3+) Phosphor Thin Films Prepared by Laser Ablation

摘要

We prepared red-light-emitting europium-doped gadolinium oxide (Gd_2O_3:Eu~(3+)) phosphor thin films by laser ablation using a KrF excimer laser, and characterized the correlation between the crystal structures and the photoluminescence properties of the ablated targets and the prepared thin films. The crystal structures of the Gd_2O_3:Eu~(3+) targets were changed from a cubic type to a monoclinic one by evaporation for the laser ablation. The prepared Gd_2O_3:Eu~(3+) thin films exhibited not only the cubic phase but also the monoclinic one on the quartz substrate heated at 500℃ for the thin-film deposition. The thin films also showed photoluminescence spectra that were superpositions of the individual cubic and monoclinic spectra. By increasing the laser fluence during the deposition of thin films, the monoclinic phase was more efficiently formed in the prepared Gd_2O_3:Eu~(3+) thin films.