...
机译:SiGe源极和漏极的45 nm p型金属氧化物半导体场效应晶体管中SiGe的窄宽和长度依赖性以及黄道孤立应力引起的缺陷
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan;
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan;
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan;
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan;
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan;
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan;
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan;
机译:SiGe源极/漏极对45 nm p型金属氧化物半导体场效应晶体管的热载流子可靠性的影响
机译:基于随机电报噪声的带尖形SiGe源极/漏极的28 nm p型金属氧化物半导体场效应晶体管中的氧化物篷布表征
机译:带有压缩SiGe源极/漏极应力源的亚30 nm应变p沟道鳍式场效应晶体管
机译:探索晶体管宽度效应对SiGe源极/漏极PMOSFET应力诱导性能的改善
机译:用于22nm体PMOS晶体管的HK和MG集成了源极和漏极中的高应变SiGe
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景