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首页> 外文期刊>Japanese journal of applied physics >Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode
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Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode

机译:使用InP肖特基势垒二极管对来自两个谐振隧穿二极管的亚兆赫兹输出功率进行外差混频

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摘要

We report on the heterodyne of output powers from GalnAs/AIAs resonant tunneling diodes (RTDs) oscillating at around 430 GHz using a Ni-lnP Schottky barrier diode (SBD) integrated with a bow-tie antenna. The RTDs have approximately the same frequencies and total output powers of 430/435GHz and 145/148uW, respectively. The full width at half maximum of the linewidth of the detected signal was 5MHz. From this result, the linewidth of each RTD was estimated to be 2.5 MHz. The obtained linewidth was theoretically discussed.
机译:我们报告了使用集成有蝶形天线的Ni-InP肖特基势垒二极管(SBD)在430 GHz左右振荡的GalnAs / AIAs共振隧穿二极管(RTD)的输出功率的外差。 RTD具有大约相同的频率,总输出功率分别为430 / 435GHz和145 / 148uW。所检测信号的线宽的一半处的全宽为5MHz。根据此结果,每个RTD的线宽估计为2.5 MHz。理论上讨论了获得的线宽。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.080211.1-080211.3|共3页
  • 作者单位

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

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