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机译:光伏应用中掺杂铟的直拉硅的晶体生长
State Key Lab of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China;
State Key Lab of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China;
Faculty of Education, Shinshu University, Nagano 380-8544, Japan;
State Key Lab of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China;
机译:关于用于光伏应用的切克劳斯基硅生长的热区设计
机译:重铟掺杂硅晶体的直拉生长和Ⅳ族元素的共掺杂效应
机译:重掺Ge的直拉生长的p型硅晶体的内生缺陷和光伏特性
机译:大晶体硅Czochralski晶体生长过程的熔体流动模拟
机译:固体颗粒为单晶硅的连续Czochralski生长提供了营养。
机译:从封面开始:用于光伏发电应用的薄膜单晶硅的二维和三维折叠
机译:Czochralski-硅晶体生长期间点缺陷扩散,重组和反应的识别和成像