机译:基于TaO_x的非极性电阻随机存取存储器的切换模型
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore;
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore;
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore;
School of EEE, Nanyang Technological University, 639798 Singapore;
South University of Science and Technology of China, Shenzhen, 518055 China;
Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore;
机译:面向电阻随机存取存储器的电阻切换机制的分析与建模
机译:基于氧化物的电阻式随机存取存储器件的电阻转换的简化模型
机译:双极电阻式随机存取存储器中电阻切换机制的随机模型:蒙特卡洛模拟
机译:具有不同电阻开关氧化物的电阻随机存取存储器(RRAM)的电热建模和仿真
机译:电阻切换随机存取存储器(RRAM):对实际应用的分析,建模和表征
机译:电阻性随机存取存储器(RRAM):材料交换机制性能多层单元(mlc)存储建模和应用概述
机译:非极性电阻存储器开关,具有所有四种可能的电阻 非晶三元稀土LaHoO3薄膜的开关模式