Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

摘要

We report metal-organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current-voltage characteristics with a high peak current density (J_P) of around 2 × 10~5A/cm~2 and peak-to-valley ratio (PVR) of around 6. A comparison with control RTDs consisting of AlAs/In_(0.8)Ga_(0.2)As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR.