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首页> 外文期刊>Japanese journal of applied physics >Thermal properties of lateral-current-injection semiconductor membrane Fabry-Perot laser under continuous-wave operation
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Thermal properties of lateral-current-injection semiconductor membrane Fabry-Perot laser under continuous-wave operation

机译:连续波操作下侧向注入半导体膜法布里-珀罗激光器的热性能

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摘要

For the realization of on-chip optical interconnects, light sources enabling ultralow power consumption and high-efficiency operation are required. With this aim, we fabricated lateral-current-injection-type membrane Fabry-Perot lasers with a threshold current of 3.5 mA and an external differential quantum efficiency of 11% under a room temperature-continuous wave (RT-CW) condition. To the best of our knowledge, we experimentally evaluated the thermal properties of a membrane laser for the first time. From the measurement, we obtained a thermal resistance of 330 K/W, which well agreed with the theoretical value of 340 K/W. From the theoretical analysis, it was found that a reduction of the benzocyclobutene thickness was effective for reducing the thermal resistance of the membrane laser. Finally, we determined that the increase in thermal resistance for short cavity (less than 50 mu m) devices is not a problem because self-heating is small for low operation current. (c) 2015 The Japan Society of Applied Physics
机译:为了实现片上光学互连,需要能够实现超低功耗和高效运行的光源。为此,我们在室温连续波(RT-CW)条件下,制造了阈值电流为3.5 mA,外部差分量子效率为11%的横向电流注入型薄膜Fabry-Perot激光器。据我们所知,我们首次通过实验评估了薄膜激光器的热性能。通过测量,我们获得了330 K / W的热阻,这与340 K / W的理论值非常吻合。从理论分析发现,减小苯并环丁烯的厚度对于减小膜激光器的热阻是有效的。最后,我们确定短腔(小于50μm)器件的热阻增加不是问题,因为对于低工作电流,自发热很小。 (c)2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第4期|042701.1-042701.5|共5页
  • 作者单位

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan|Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan;

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