Fujitsu Achieves World's Highest Output Density with Power Amplifier for W-Band GaN Transmitters

摘要

New technologies allow for longer range, higher capacity wireless communications with lower power consumption Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a gallium-nitride (GaN)(1) high-electron mobility transistor (HEMT)(2) power amplifier for use in W-band (75-110 GHz) transmissions.