机译:使用100 nm AlGaN / GaN双栅极HEMT的V波段应用的高增益大功率放大器MMIC
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany,Karlsruhe Institute of Technology, Institut fuer Hochfrequenztechnik und Elektronik, D-76131 Karlsruhe, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany;
100 nm AlGaN/GaN; dual-gate HEMT; millimeter-wave GaN HEMT; power amplifier; millimeter-wave amplification; V-band; MMIC;
机译:采用双栅极GaN HEMT的两级高增益大功率分布式放大器
机译:紧凑的C波段50 W AlGaN / GaN高功率MMIC放大器,用于雷达应用
机译:AlGaN / GaN HEMT的可扩展大信号多谐波模型及其在C波段大功率放大器MMIC中的应用
机译:使用100 nm AlGaN / GaN双栅极HEMT的56–65 GHz大功率放大器MMIC
机译:使用AlGaN / GaN HEMT的大功率,宽带微波F类功率放大器的设计
机译:0.1μmAlGaN / GaN高电子迁移率晶体管(HEMT)工艺的改进大信号模型及其在W波段实用单片微波集成电路(MMIC)设计中的应用
机译:Ka波段AlGaN / GaN HEMT高功率和驱动器放大器MMIC
机译:高功率,高效率sspas中siC和蓝宝石mmIC上微波alGaN / GaN HEmT的沟道温度模型