MICRO STRAIN SENSOR BASED ON DRAIN CURRENT CHANGE OF MOSFET

摘要

Many types of tactile sensor have been proposed and developed, and they are becoming miniaturized and more precise at present state. Micro tactile sensors of high performance comparable to a human being are desired for robotic application, in which skilful and dexterous motion like a human being is necessary. Micromachining is one solution to realize a practical tactile sensor. In usual researches, capacitive, piezoelectric, and piezoresis-tive types are employed as the measurement principle of a micromachined sensor. In this paper, the MOSFET is applied and the drain current change of it when applied strain is employed as the measurement principle of tactile sensor. A fabricated sensor based on this principle detects strain with a good linearity. The result is compared with that of a conventional piezoresistive strain sensor, which shows the sensitivity of the developed MOSFET strain sensor has a good possibility compatible to conventional type sensors.