On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

摘要

An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H_2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.