A promising CuO_x/WO_3 p-n heterojunction thin- film photocathode fabricated by magnetron reactive sputtering

摘要

A CuOx/WO3 thin-film based on p-n heterojunction proposed as a highly performance and stable photocathode. The CuOx/WO3 thin-film was deposited by magnetron reactive sputtering layer by layer, followed with slow rate annealing in O-2 ambient. This is an excellent method for high-quality and uniform composite thin-film deposition with large areas at a high growth rate. The optimized CuOx/WO3 thin-film photocathode after slow rate annealing at 500 degrees C in O-2 provides an obviously enhanced photoinduced current density of -3.8 mA cm(-2) at a bias potential of -0.5 V (vs. Ag/AgCl), which value is 1.5 times higher than that of bared CuOx thin-film. This highly enhanced photoelectrochemical performance is attributed to p-n heterojunction, which accelerates the photogenerated electrons and holes transfer to n-WO3 and p-CuOx, thereby accelerate the separation of photogenerated carries. In addition, WO3 layer covered on the surface of CuOx thin film can improve the stability of Cu2O in electrolytes. (C) 2018 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.