A 0.6-V sub-mW X-band RFSOI CMOS LNA with novel complementary current-reused technique

摘要

A fully integrated 0.6V low-noise amplifier (LNA) for X-band receiver application based on 0.18m RFSOI CMOS technology is presented in this paper. To achieve low noise and high gain with the constraint of low voltage and low power consumption, a novel modified complementary current-reused LNA using forward body bias technique is proposed. A diode connected MOSFET forward bias technique is employed to minimize the body leakage and improve the noise performance. A notch filter isolator is constructed to improve the linearity of low voltage. The measured results show that the proposed LNA achieves a power gain of 11.2dB and a noise figure of 3.8dB, while consuming a DC current of only 1.6mA at supply voltage of 0.6V. Copyright (c) 2017 John Wiley & Sons, Ltd.